图片仅供参考，请以实物为准
ROHUS6M2TR
满参数 |
数值 |
|---|---|
| Package | 6TUMT |
| Channel Type | N|P |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 30@N Channel|20@P Channel V |
| Maximum Continuous Drain Current | 1.5@N Channel|1@P Channel A |
| RDS-on | 240@4.5V@N Channel|390@4.5V@P Channel mOhm |
| Maximum Gate Source Voltage | 12 V |
| Typical Turn-On Delay Time | 7@N Channel|9@P Channel ns |
| Typical Rise Time | 9@N Channel|8@P Channel ns |
| Typical Turn-Off Delay Time | 15@N Channel|25@P Channel ns |
| Typical Fall Time | 6@N Channel|10@P Channel ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Category | MOSFET |
| Manufacturer | Rohm Semiconductor |
