ROHSP8M4FU6TB  

参数	数值
Category	MOSFET
Maximum Drain Source Voltage	30 V
Typical Rise Time	15@N Channel|50@P Channel ns
Typical Turn-Off Delay Time	55@N Channel|110@P Channel ns
Channel Mode	Enhancement
Maximum Continuous Drain Current	9@N Channel|7@P Channel A
Package	8SOP
Mounting	Surface Mount
Maximum Gate Source Voltage	±20 V
Channel Type	N|P
Typical Turn-On Delay Time	10@N Channel|20@P Channel ns
Operating Temperature	-55 to 150 °C
RDS-on	18@10V@N Channel|28@10V@P Channel mOhm
Manufacturer	Rohm Semiconductor
Typical Fall Time	22@N Channel|70@P Channel ns