ROHSP8M3FU6TB  

参数	数值
Category	MOSFET
Maximum Drain Source Voltage	30 V
Typical Rise Time	8@N Channel|25@P Channel ns
Typical Turn-Off Delay Time	22@N Channel|60@P Channel ns
Channel Mode	Enhancement
Maximum Continuous Drain Current	5@N Channel|4.5@P Channel A
Package	8SOP
Mounting	Surface Mount
Maximum Gate Source Voltage	±20 V
Channel Type	N|P
Typical Turn-On Delay Time	6@N Channel|10@P Channel ns
Operating Temperature	-55 to 150 °C
RDS-on	51@10V@N Channel|56@10V@P Channel mOhm
Manufacturer	Rohm Semiconductor
Typical Fall Time	5@N Channel|25@P Channel ns