ROHSP8K1FU6TB  

参数	数值
Category	MOSFET
Maximum Drain Source Voltage	30 V
Typical Rise Time	8 ns
Typical Turn-Off Delay Time	22 ns
Channel Mode	Enhancement
Maximum Continuous Drain Current	5 A
Maximum Gate Source Voltage	±20 V
Mounting	Surface Mount
Package	8SOP
Typical Turn-On Delay Time	6 ns
Operating Temperature	-55 to 150 °C
RDS-on	51@10V mOhm
Manufacturer	Rohm Semiconductor
Typical Fall Time	5 ns