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ROHRUR020N02TL
满参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Package | 3TSMT |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 20 V |
| Maximum Continuous Drain Current | 2 A |
| RDS-on | 105@4.5V mOhm |
| Maximum Gate Source Voltage | ±10 V |
| Typical Turn-On Delay Time | 6 ns |
| Typical Rise Time | 17 ns |
| Typical Turn-Off Delay Time | 30 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Category | MOSFET |
| Manufacturer | Rohm Semiconductor |
