ROHRTU002P02T106  

参数	数值
Category	MOSFET
Maximum Drain Source Voltage	20 V
Typical Rise Time	6 ns
Typical Turn-Off Delay Time	35 ns
Channel Mode	Enhancement
Maximum Continuous Drain Current	0.25 A
Package	3TSMT
Mounting	Surface Mount
Maximum Gate Source Voltage	±12 V
Channel Type	P
Typical Turn-On Delay Time	9 ns
Operating Temperature	-55 to 150 °C
RDS-on	1500@4.5V mOhm
Manufacturer	Rohm Semiconductor
Typical Fall Time	45 ns