图片仅供参考，请以实物为准
NE5230DR2G
满1000元免运费及包装费
参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Package | 8SOIC N |
| Number of Channels per Chip | 1 |
| Type | General Purpose Amplifier |
| Typical Gain Bandwidth Product | 0.6 MHz |
| Typical Slew Rate | 0.25@±7.5V V/us |
| Maximum Supply Current | 1.6@±7.5V mA |
| Maximum Input Offset Voltage | 3@±7.5V mV |
| Maximum Input Bias Current | 0.15@±7.5V uA |
| Typical Input Noise Voltage Density | 60@±7.5V nV/rtHz |
| Minimum Single Supply Voltage | 1.8 V |
| Maximum Single Supply Voltage | 15 V |
| Minimum Dual Supply Voltage | ±0.9 V |
| Maximum Dual Supply Voltage | ±7.5 V |
| Mounting | Surface Mount |
| Operating Temperature | 0 to 70 °C |
| Typical Voltage Gain | 126.02 dB |
