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PHSBST82T1
参数 |
数值 |
|---|---|
| 规格书 |
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| Package | 3TO-236AB |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 100 V |
| Maximum Continuous Drain Current | 0.19 A |
| RDS-on | 10000@5V mOhm |
| Maximum Gate Source Voltage | ±20 V |
| Operating Temperature | -65 to 150 °C |
| Mounting | Surface Mount |
| Category | MOSFET |
| Manufacturer | NXP Semiconductors |
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