图片仅供参考，请以实物为准
SPB12N50C3E3045
满
参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 560 V |
| Maximum Continuous Drain Current | 11.6 A |
| RDS-on | 380@10V mOhm |
| Maximum Gate Source Voltage | ±20 V |
| Typical Turn-On Delay Time | 10 ns |
| Typical Rise Time | 8 ns |
| Typical Turn-Off Delay Time | 45 ns |
| Operating Temperature | -55 to 150 °C |
| Category | MOSFET |
| Manufacturer | Infineon Technologies |
