图片仅供参考，请以实物为准
2N6661JAN
满参数 |
数值 |
|---|---|
| Category | MOSFET |
| Maximum Drain Source Voltage | 90 V |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 0.86 A |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Through Hole |
| Package | 3TO-205AD |
| Operating Temperature | -55 to 125 °C |
| RDS-on | 4000@10V mOhm |
| Manufacturer | Vishay / Siliconix |
