图片仅供参考，请以实物为准
STMSTI35N65M5
满
参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | MOSFET |
| Maximum Drain Source Voltage | 650 V |
| Typical Rise Time | 12 ns |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 27 A |
| Maximum Gate Source Voltage | ±25 V |
| Mounting | Through Hole |
| Package | 3I2PAK |
| Typical Turn-On Delay Time | 60 ns |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 98@10V mOhm |
| Manufacturer | STMicroelectronics |
| Typical Fall Time | 16 ns |
