图片仅供参考，请以实物为准
STMSTD3NM501
满
参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | MOSFET |
| Maximum Drain Source Voltage | 550 V |
| Typical Rise Time | 10 ns |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 3 A |
| Maximum Gate Source Voltage | ±30 V |
| Mounting | Through Hole |
| Package | 3IPAK |
| Typical Turn-On Delay Time | 7 ns |
| Operating Temperature | -65 to 150 °C |
| RDS-on | 3000@10V mOhm |
| Manufacturer | STMicroelectronics |
| Typical Fall Time | 9 ns |
