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ROHRJP020N06T100
满参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | MOSFET |
| Maximum Drain Source Voltage | 60 V |
| Typical Rise Time | 18 ns |
| Typical Turn-Off Delay Time | 40 ns |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 2 A |
| Maximum Gate Source Voltage | ±12 V |
| Mounting | Surface Mount |
| Package | 4MPT |
| Typical Turn-On Delay Time | 8 ns |
| RDS-on | 240@4.5V mOhm |
| Manufacturer | Rohm Semiconductor |
| Typical Fall Time | 20 ns |
