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ROHR6008ANX
参数 |
数值 |
---|---|
Category | MOSFET |
Maximum Drain Source Voltage | 600 V |
Typical Turn-Off Delay Time | 60 ns |
Channel Mode | Enhancement |
Maximum Continuous Drain Current | 8 A |
Maximum Gate Source Voltage | ±30 V |
Mounting | Through Hole |
Package | 3TO-220FM |
Typical Turn-On Delay Time | 25 ns |
Operating Temperature | -55 to 150 °C |
RDS-on | 800@10V mOhm |
Manufacturer | Rohm Semiconductor |
Typical Fall Time | 35 ns |