图片仅供参考，请以实物为准
2N6032JANTXV
满
参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | GP BJT |
| Minimum DC Current Gain | 10@50A@2.6V |
| Maximum Collector Base Voltage | 120 V |
| Package | 3TO-3 |
| Mounting | Through Hole |
| Maximum Collector Emitter Saturation Voltage | 1.3@5A@50A V |
| Maximum Collector Emitter Voltage | 90 V |
| Maximum Power Dissipation | 140000 mW |
| Operating Temperature | -65 to 200 °C |
| Maximum DC Collector Current | 50 A |
| Type | NPN |
| Pin Count | 3 |
| Manufacturer | Microsemi |
