图片仅供参考，请以实物为准
PHSBUK653R555C127
满参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | MOSFET |
| Maximum Drain Source Voltage | 55 V |
| Typical Rise Time | 93 ns |
| Typical Turn-Off Delay Time | 156 ns |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 120 A |
| Maximum Gate Source Voltage | 16 V |
| Mounting | Through Hole |
| Package | 3TO-220AB |
| Typical Turn-On Delay Time | 47 ns |
| Operating Temperature | -55 to 175 °C |
| RDS-on | 3.9@10V mOhm |
| Manufacturer | NXP Semiconductors |
| Typical Fall Time | 148 ns |
