图片仅供参考，请以实物为准
PHSBST82T1
满参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | MOSFET |
| Maximum Drain Source Voltage | 100 V |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 0.19 A |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Surface Mount |
| Package | 3TO-236AB |
| Operating Temperature | -65 to 150 °C |
| RDS-on | 10000@5V mOhm |
| Manufacturer | NXP Semiconductors |
