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PHSBSP126135
满参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | MOSFET |
| Maximum Drain Source Voltage | 250 V |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 0.375 A |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Surface Mount |
| Package | 4SOT-223 |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 5000@10V mOhm |
| Manufacturer | NXP Semiconductors |
