图片仅供参考，请以实物为准
IRFIRFB5620PBF
满
参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | MOSFET |
| Maximum Drain Source Voltage | 200 V |
| Typical Rise Time | 14.6 ns |
| Typical Turn-Off Delay Time | 17.1 ns |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 25 A |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Through Hole |
| Package | 3TO-220AB |
| Typical Turn-On Delay Time | 8.6 ns |
| Operating Temperature | -55 to 175 °C |
| RDS-on | 72.5@10V mOhm |
| Manufacturer | International Rectifier |
| Typical Fall Time | 9.9 ns |
