图片仅供参考，请以实物为准
+SPB80N03S2L03E
满
参数 |
数值 |
|---|---|
| 规格书 |
 数据手册下载 |
| Category | MOSFET |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time | 99 ns |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 80 A |
| Maximum Gate Source Voltage | ±20 V |
| Typical Rise Time | 34 ns |
| Typical Turn-On Delay Time | 11.8 ns |
| Operating Temperature | -55 to 175 °C |
| RDS-on | 3.1@10V mOhm |
| Manufacturer | Infineon Technologies |
| Typical Fall Time | 90 ns |
