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SPB12N50C3E3045
参数 |
数值 |
---|---|
规格书 | 数据手册下载 |
Category | MOSFET |
Maximum Drain Source Voltage | 560 V |
Typical Turn-Off Delay Time | 45 ns |
Channel Mode | Enhancement |
Maximum Continuous Drain Current | 11.6 A |
Maximum Gate Source Voltage | ±20 V |
Typical Rise Time | 8 ns |
Typical Turn-On Delay Time | 10 ns |
Operating Temperature | -55 to 150 °C |
RDS-on | 380@10V mOhm |
Manufacturer | Infineon Technologies |